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SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
Features
* Extremely Low Parasitic Capitance and Inductance * Extremely Small 0201 (600x300um) Footprint * Surface Mountable in Microwave Circuits, No Wirebonds Required * Rugged HMIC Construction with Polyimide Scratch Protection * Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300 C, 16 hours) * Lower Susceptibility to ESD Damage
MA4E2501-1290 Series V1
The MA4E2501L-1290 SurMount Low Barrier Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.
Case Style 1290
A
Description and Applications
The MA4E2501L-1290 SurMountTM Diodes are Silicon Low Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The extremely small " 0201 " outline allows for Surface Mount placement and multi-functional polarity orientations.
D E F
B
C
G
Cathode
+ Anode
Inches Dim A B C D E F G Min. 0.023 0.011 0.004 0.006 0.007 0.006 0.009 Max. 0.025 0.013 0.008 0.008 0.009 0.008 0.011
Millimeters Min. 0.575 0.275 0.102 0.150 0.175 0.150 0.220 Max. 0.625 0.325 0.203 0.200 0.225 0.200 0.270
1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
Electrical Specifications @ 25 C
Model Number MA4E2501L1290 Type Recommended Frequency Range DC - 18 GHz Vf @ 1 mA ( mV ) 330 Max 300 Typ Vb @ 10 uA (V) 3 Min 5 Typ Ct @ 0V ( pF ) 0.12 Max 0.10 Typ
MA4E2501-1290 Series V1
Low Barrier
Rt Slope Resistance ( Vf1 - Vf2 )/(10.5mA-9.5mA ) () 10 Typ 14 Max
Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA)
Handling
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize damage. The rugged construction of these SurMount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized.
Die Bonding
Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for higher temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage. Die attach with Electrically Conductive Silver Epoxy is Not Recommended. For Hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying Equal heat to the circuit at both die-mounting pads. The solder joint must Not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should Not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed.
Absolute Maximum Ratings @ 25 C (Unless Otherwise Noted) 1
Parameter Operating Temperature Storage Temperature Forward Current Reverse Voltage RF C.W. Incident Power RF & DC Dissipated Power Absolute Maximum -40 C to +150 C -40 C to +150 C 20 mA 5V + 20 dBm 50 mW
1. Operation of this device above any one of these parameters may cause permanent damage. 2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
SURMOUNTTM Low Barrier 0201 Footprint Silicon Schottky Diodes
MA4E2501L-1290 Low Barrier SPICE PARAMETERS
Is (nA) 26 Rs () 12.8 N 1.20 Cj0 ( pF ) 1.0 E-2 M 0.5 Ik (mA) 14 Cjpar (pF) 9.0 E-2 Vj (V) 8.0 E-2 FC 0.5
MA4E2501-1290 Series V1
BV (V) 5.0
IBV (mA) 1.0 E-2
Typical Performance
0.140 0.120 Total Capacitance (pF) 0.100 0.080 0.060 0.040 0.020 0.000 0 100 200 300 400 500 Frequency (MHz)
Circuit Mounting Dimensions (Inches)
0.007 0.007
Ordering Information
Part Number MA4E2501L-1290W MA4E2501L-1290 MA4E2501L-1290T Package Wafer on Frame Die in Carrier Tape/Reel
0.010
0.010
0.008
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.

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